RA80H1415M1 modules equivalent, silicon rf power modules.
* Enhancement-Mode MOSFET Transistors (IDD0 @ VDD=12.5V, VGG=0V) * Pout>80W, T>50% @f=144-148MHz, Pout>60W, T>50% @ f=136-174MHz, VDD=12.5V, VGG=5V, Pin=50mW <.
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